By A. R. Alvarez (auth.), A. R. Alvarez (eds.)
The subject of bipolar suitable CMOS (BiCMOS) is an interesting one and of ever-growing sensible significance. The "technology pendulum" has swung from the 2 extremes of preeminence of bipolar within the Nineteen Fifties and 60s to the obvious never-ending horizons for VLSI NMOS know-how through the Seventies and 80s. but beginning within the Nineteen Eighties severallimits have been clouding the horizon for natural NMOS know-how. CMOS reemerged as a· potential excessive density, excessive functionality expertise. equally by way of the mid Nineteen Eighties scaled bipolar units had not just verified new excessive velocity documents, yet early types of combined bipolar/CMOS expertise have been being produced. for this reason the paradigm of both excessive density . Q[ excessive velocity was once metamorphasizing into a chance for either velocity and density through a BiCMOS procedure. Now as we technique the Nineteen Nineties there were a few useful demonstrations of BiCMOS either for reminiscence and common sense purposes and that i anticipate the fashion to boost over the following decade. This e-book makes a well timed contribution to the sector of BiCMOS know-how and circuit improvement. The evolution is now certainly swift in order that it really is tough to make any such publication exhaustive of present advancements. most likely both tricky is the truth that the recent know-how opens a number of novel circuit possibilities which are as but in simple terms formative of their improvement. Given those stumbling blocks it's a herculean activity to aim to collect a e-book on BiCMOS.
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Additional resources for BiCMOS Technology and Applications
7]. © 1984 IEEE. 9]. 1. Because the lightly-doped side of a junction determines the capacitance and the breakdown voltage to the first order, these parameters will also be controlled by the background and channel profiles. 2 , . - - - - - , - - - - , - - - - - , - - - - - . - - - - . 8. Simulated electrical potential perpendicular to the surface in the channel region. N+ poly is buried-channel device. 8]. © 1985 IEEE. 1. Primary process parameters, and the resulting impact (increase . MOSFET a of istics character the key electricaI coupled Therefore, the parasitic effects associated with the source/drains will be to the channel design.
A much smaller portion will be devoted to the essential analog processing needed in order to interface to the outside world. The analog-digital boundary no longer a matter of chip partitioning, the circuit designer can choose the most suitable domain for each part of the required solution. This benefit leads to the most efficient use of silicon in a complex system. 16 BieMOS Technology and Applications Bipol&r technology had long been the domain of classical analog circuits. The advent of switched capacitor circuit technology in the late 1970s caused a shift to analog CMOS for telecommunications, data conversion, and filter applications.
33] have proposed a method for NPN device design, graphically depicted in fig. 22. First order NPN device design. The vertical profile design is set to optimize device delay, while optimal horizontal design minimizes the parasitics. 34]. © 1988 IEEE. far. Circuit requirements determine the current density of the device. This sets the minimum collector doping and maximum epi thickness based on Kirk effect considerations. The current density also sets the maximum doping allowed due to the required current gain.
BiCMOS Technology and Applications by A. R. Alvarez (auth.), A. R. Alvarez (eds.)